Comparative study of wet sulfur passivation process on GaSb (100) surface

ABSTRACTA comparative study for the pristine and sulfur passivated surfaces of gallium antimonide (GaSb) grown using molecular beam epitaxy is presented with the results recorded through X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) techniques. The as-grown GaSb surfaces were treated separately with 20% aqueous ammonium sulphide, ((NH4)2S), at 60°C for 10 m, aqueous sodium sulfide nonahydrate (Na2S.9H2O) with molarity 1 for 4 m at room temperature and base-thioacetamide (base-TAM) with molarity 0.18 for 40 m at 70°C. AFM topography shows the formation of very clean and flat surface for base-TAM treated GaSb. XPS results reveal lowest concentration of Ga2O3for GaSb surface treated with base-TAM.