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Electrical properties of molecular beam epitaxial GaAs grown at 300450C
Electrical properties of molecular beam epitaxial GaAs grown at 300450C
1993
David C. Look
G. D. Robinson
J. R. Sizelove
C. E. Stutz
Keywords:
Molecular beam
Analytical chemistry
Chemistry
Hall effect
Molecular beam epitaxy
Epitaxy
Correction
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