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Evidence for impact ionisation in AlGaN/GaN HEMTs with InGaN back-barrier
Evidence for impact ionisation in AlGaN/GaN HEMTs with InGaN back-barrier
2011
Tomas Palacios
Nicole Killat
M. Tapajna
M. Faqir
Martin Kuball
Keywords:
Atomic physics
Ionization
Materials science
Optoelectronics
algan gan
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