Embedded PCM macro for automotive-grade microcontroller in 28nm FD-SOI

The paper proposes a BEOL PCM-based e-NVM solution integrated in a 28nm FD-SOI CMOS technology, giving excellent performances in terms of area, read and write time and temperature range. The integration of a 6MB PCM in an automotive grade (Tj up to 165C) microcontroller chip is presented here, exhibiting a robust solution satisfying all criteria of the demanding automotive environment. The Ge x Sb y Te z material used for the PCM [1] has been tuned to reach the 165C compliance and 10 years data retention. CMOS 28nm FD-SOI has been determined as the optimal technology to exploit PCM capabilities [2]. Technology also offers full feature 5V devices required for automotive application. Body bias of the FD-SOI allows controlling the quiescent leakage both in circuitry and in the unselected bits inside the memory array, optimizing the functionality.