Characterisation of Semiconductor Nanowires by Electron Beam Induced Microscopy and Cathodoluminescence

Nowadays the realization of market-competitive devices based on nanomaterials is a major challenge. Optimization of the device performance requires a deep understanding of the physical phenomena at the nanoscale. In this context, electron beam-based techniques become indispensable. Several instruments have been developed in the past decades to provide versatile diagnostic solutions for improving materials, designs, and device fabrication. These characterization techniques applied to nanostructured semiconductors can help filling the gap between material science and engineering by bringing in light important physical parameters. In this Chapter, the family of electron beam-based techniques is briefly introduced. First, the electron beam/matter interaction is described both in physical and operational terms. In particular, different phenomena occurring when a flux of electron collides with a semiconductor material are discussed. Then, two main electron beam scanning techniques are discussed in the following sections: electron beam induced current microscopy and cathodoluminescence. After a short description of the fundamentals, for each technique, a bibliographic review is presented to illustrate its applications to analyses of semiconductor nanowires.