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Structural and optical quality of GaN grown on Sc 2 O 3 /Y 2 O 3 /Si(111)
Structural and optical quality of GaN grown on Sc 2 O 3 /Y 2 O 3 /Si(111)
2012
L. Tarnawska
Peter Zaumseil
M. A. Schubert
Serdal Okur
Umit Ozgur
Hadis Morkoç
R. Paszkiewicz
P. Storck
Thomas Schroeder
Keywords:
X-ray crystallography
molecular beam epitaxial growth
Wide-bandgap semiconductor
Optoelectronics
Semiconductor
rapid thermal annealing
Photoluminescence
Materials science
optical quality
Correction
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