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Influence of Nitrogen Concentration on Self‐Compliance Resistive Switching in Ta/SiNx/Pt RRAM Devices
Influence of Nitrogen Concentration on Self‐Compliance Resistive Switching in Ta/SiNx/Pt RRAM Devices
2018
Hai-xia Gao
Peng Fei Jiang
Zhen Fei Zhang
Mei Yang
Xiao Hua Ma
Yin Tang Yang
Keywords:
Nuclear magnetic resonance
Nitrogen
Resistive random-access memory
Physics
Resistive touchscreen
Optoelectronics
Condensed matter physics
resistive switching
Correction
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