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X-Ray Topography Analysis of 4H-SiC Crystals Grown by the High-Temperature Gas Source Method
X-Ray Topography Analysis of 4H-SiC Crystals Grown by the High-Temperature Gas Source Method
2018
Isaho Kamata
Norihiro Hoshino
Yuichiro Tokuda
Emi Makino
Takahiro Kanda
Naohiro Sugiyama
Hironari Kuno
Jun Kojima
Hidekazu Tsuchida
Keywords:
Metallurgy
Materials science
Crystal
X-ray
Mineralogy
Composite material
Correction
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