Epitaxial growth of 3C-SiC on Si(111) using hexamethyldisilane and tetraethylsilane

Hexamethyldisilane (HMDS, Si2(CH3)6) and tetraethylsilane (TES, Si(C2H5)4) were used as safe organosilane sources for the chemical vapor deposition of SiC films on Si(111) substrates. The surface morphology and crystalline quality of SiC films were investigated. On increasing temperature in H2 ambient after carbonization, voids appeared at the interface of SiC/Si causing the formation of hillocks on the grown SiC films. The formation of voids was prevented by supplying C3H8 and HMDS or TES during the heating process to the growth temperature, leading to the growth of SiC films with a good surface morphology. In the case of TES, the excess carbon incorporated in the film due to the high C/Si ratio was removed by reducing TES flow rate. It was found that the control of the flow rate of organosilane sources during heating plays a vital role in the formation of a high-quality SiC film with a smooth surface.