Thickness dependence of optoelectrical properties of mo-doped In 2 O 3 films deposited on polyethersulfone substrates by ion-beam-assisted evaporation

Indium molybdenum oxide (IMO) films were deposited onto the polyethersulfone (PES) substrates by ion-beam-assisted evaporation (IBAE) deposition at low temperature in this study. The effects of film thickness on their optical and electrical properties were investigated. The results show that the deposited IMO films exhibit a preferred orientation of B(222). The electrical resistivity of the deposited film initially reduces then subsequently increases with film thickness. The IMO film with the lowest resistivity of 7.61 × 10-4 ohm-cm has been achieved when the film thickness is 120 nm. It exhibits a satisfactory surface roughness Rpv of 8.75nm and an average visible transmittance of 78.7%.