A magnetic memory resistive element layer three-layer structure

The present invention provides a three-layer structure of the magnetoresistive memory element layer, including successively adjacent reference layer, the barrier layer, the memory layer, the base layer and the lattice optimization layer; reference layer magnetization direction of the magnetic constant and perpendicular to the surface of the anisotropic layer; variable magnetization direction of the memory layer and the magnetic anisotropy perpendicular to the layer surface, and which consists of successively disposed adjacent to a first memory sub-layer, and a second sub-layer interposed between the memory said three-layer film layer is inserted between the first memory and the second memory sub-layer sub-layers; the barrier layer adjacent to the first memory sub-layer; the layer and the lattice optimization the second sub-layer adjacent to the memory, the lattice optimization with a material layer is a layer lattice structure and it NaCl (100) crystal plane parallel to the base plane, and further comprising at least one doping element, the optimized lattice layer may also be provided as a two-layer structure; correcting further includes a magnetic layer and a stabilizing spin polarization layer, which are sequentially disposed between the base layer and the layer lattice optimization.