Estimation of percentage relaxation in Si/Si1-xGex strained-layer superlattices

A series of Si/Si1-xGex strained-layer superlattice structures has been studied by X-ray double-crystal diffractometry, Raman spectroscopy and transmission electron microscopy. The periodicity of the superlattices, the alloy composition and the degree of relaxation have been measured. The precisions of the three techniques are discussed and the results critically compared.