Study of defects in Al 2 O 3 blocking layers of TANOS memories by atomistic simulation, electrical characterization and physico-chemical material analyses

In this work we investigate the correlation between hydrogen content and leakage current through the Al 2 O 3 layers of TANOS memories. We put in evidence that retention of TANOS memories is improved with the decrease of H concentration in the Al 2 O 3 layer. Using atomistic simulations consolidated by detailed Al 2 O 3 physico-chemical analyses, we find that interstitial H produces a midgap trap likely to participate to trap assisted conduction.