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Influence of plasma on electrophysical properties of the GaP/n-Si isotype heterojunction grown by PE-ALD
Influence of plasma on electrophysical properties of the GaP/n-Si isotype heterojunction grown by PE-ALD
2020
A. I. Baranov
A. V. Uvarov
D. A. Kudryashov
I. A. Morozov
A. S. Gudovskikh
Keywords:
Optoelectronics
Plasma
Materials science
Heterojunction
Isotype
Correction
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