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Non-invasive SOI gating of 2D electron systems on pristine hydrogen-terminated Si surfaces
Non-invasive SOI gating of 2D electron systems on pristine hydrogen-terminated Si surfaces
2018
Luke D. Robertson
B. E. Kane
Keywords:
Silicon on insulator
Nuclear magnetic resonance
Gating
Electron
Hydrogen
Materials science
non invasive
Optoelectronics
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