Method for growing p-type ZnO crystal thin film by Li-F codoping

The invention discloses a method for growing a p-type ZnO crystal thin film by Li-F codoping. The pulse laser deposition method is adopted. A ZnF2-dooped and Li2O-doped ZnO ceramic target is used as the target and prepared from pure zinc oxide powder, pure zinc fluoride powder and pure lithium carbonate powder by ball milling, press forming and sintering, wherein the molar content of the zinc fluoride is 0.3 percent and the molar content of the lithium oxide is 0.3 to 0.9 percent; and the p-type ZnO crystal thin film is grown on a substrate in a growth chamber of a pulse laser deposition device under the growth atmosphere of pure oxygen, wherein the pressure intensity of the oxygen is 5 to 20Pa, the laser frequency is 3 to 5Hz and the growth temperature is 300 to 500 DEG C. The method of the invention can realize real-time doping, and the doping density is controlled by adjusting the growth temperature and the molar content of Li and F in the target. The p-type ZnO crystal thin film prepared by the method of the invention has high electrical property, high repeatability and high stability.