Low energy inductively coupled plasma etching of HgCdTe

The high-density inductively coupled plasma etching technique was applied to HgCdTe, while using the RF-powered wafer electrode to provide low plasma energy. By using a CH 4 /H 2 /N 2 /Ar chemistry the HgCdTe etch profiles were studied as a function of mask selectivity, chamber pressure, gas ratio and ICP power. The etch rate was found to decrease as etch depth increasing. The LBIC and I-V measurements were employed to investigate the electrical damage of HgCdTe material caused by plasma bombardment.