Nickel Thin Films Grown by MOCVD Using Ni(dmg)2 as Precursor

The aim of this study was (i) to investigate alternatives to the very toxic Ni(CO) 4 , (ii) optimization of the parameters for Ni film growth, and (iii) characterization of the film morphology. The thermal behaviour of the precursors bis(dimethylglyoximato)Ni(II), [Ni(dmg) 2 ], bis(2,2,6,6-tetramcthyl-3,5-heptandionato)Ni(II), [Ni(thd) 2 ], N,N'-ethylenebis(2,4-pentandioniminoato)Ni(II), [Ni(enacac)], and bis(2-amino-pent-2-en-4-onato)Ni(II), [Ni(apo)2] were investigated in a model reactor. Furthermore, the evaporation rates of these compounds were determined. Metallic nickel films were obtained using Ni(dmg) 2 as precursor. The deposition was carried out in a horizontal quartz reactor at reduced pressure in a hydrogen/helium atmosphere. The films were analysed by profilometry, X-ray diffraction, atomic force microscopy (AFM), fourpoint resistivity measurements and electron spectroscopy for chemical analysis (ESCA). Comparison of the AFM and ESCA data with the electrical resistances resulted in a two layer film model.