Semiconductor device and power converter that uses this

In order to suppress a temperature rise of a chip that accompanies production of large output power by a power converter, and to reduce a size of the power transducer includes a power semiconductor device comprising: a first power semiconductor element 1a to configure an upper arm of an inverter circuit; a second power semiconductor element to configure a lower branch of the inverter circuit 1c; a first lead frame 3, to transmit power to the first power semiconductor element 1a; a second lead frame 4 in order to transfer energy to the second power semiconductor element 1c; a first gate lead frame 5 in order to transmit a control signal to the first power semiconductor element 1a; and a sealing member to seal the first power semiconductor element 1a, the second power semiconductor element 1c, the first lead frame 3, the second lead frame 4 and the first gate line frame. 5 In the power semiconductor device, a through hole is formed in the sealing member, and a portion of the first gate lead frame and a part of the second gate lead frame 4 are exposed to an inner peripheral surface of the through hole.