Study on the evolution and nature of interstitial-type defects following proton and alpha particle implantation during low-dose proximity gettering of platinum

Abstract Platinum has been diffused into epitaxial n-type silicon at 600°C, 650°C and 700°C for 30 min following implantation with 3.3 MeV alpha particles. The doses employed were between 1 × 10 11 and 1 × 10 14 He + cm −2 . Also an implantation involving protons at 850 keV with doses of 5 × 10 13 and 5 × 10 14 H + cm −2 has been performed followed by an annealing at 600°C or 700°C. Thereafter the samples were characterized using Deep Level Transient Spectroscopy (DLTS). Apart from the platinum deep level at 0.23 eV below the conduction band, other deep levels (so-called K-lines) may appear in the deep level transient spectroscopy spectrum depending on the respective implantation dose or annealing temperature. We have traced the evolution of these spectra from the state without a platinum deep level to its appearance by varying the implantation dose and the annealing parameters. It was thus possible to determine which defects might influence platinum diffusion. In addition, one of the observed defects was observed only after the proton implantation and is thus considered to be hydrogen-related. Possible identities of the other defects are discussed.