Newshort-channel effects on oitrided oxide gate MOSFETs

H.S. Momose,T Monmoto,Shinichi Takagi,K Yamabe,S. Onga,H. Iwai

Newshort-channel effects on oitrided oxide gate MOSFETs

1990

H.S. Momose
T Monmoto
Shinichi Takagi
K Yamabe
S. Onga
H. Iwai

New shortchannel effects withnitnde-oxide gateMOSFETswere found, where threshold voltage reduction occursin a relatively long channel regionTheseeffects wouldbeexplained bytrapped charges orinterface statesinduced bythemechanical stress attheSiandthenitride oxidegate film m thecourseoftheheatpiocess

Keywords:

Oxide
Electronic engineering
Threshold voltage
Reverse short-channel effect
Communication channel
Materials science
Optoelectronics

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