High-performance rigid and flexible ultraviolet photo- detectors with single-crystalline ZnGa2O4 nanowires

ZnGa2O4 nanowires （NWs） as a ternary oxide semiconductor were successfully synthesized by a simple vapor transport method for application as high- performance ultraviolet （UV） photodetectors. A single-nanowire UV photodetector fabricated on a rigid silicon substrate exhibited excellent spectral responsivity （3,174 A/W） and high external quantum efficiency （1.1 - 106%） at 350 nm UV light illumination. A flexible single-nanowire photodetector on a polyethylene terephthalate （PET） substrate was also fabricated and showed similar properties. The as-fabricated flexible photodetector exhibited stable electrical properties and mechanical flexibility under different bending curvatures over many cycles, indicating its potential application in future flexible photoelectronic devices.