Contact resistance reduction using Fermi level de-pinning layer for MoS 2 FETs

Achieving a low contact resistance for 2D materials is a critical challenge for device applications. In this work, the contact resistance of MoS 2 FETs has been drastically reduced by five times from the reference data using an optimized TiO 2 Fermi level de-pinning layer which reduced the effective Schottky barrier height to 0.1 eV. As a result, a very low contact resistance ∼5.4 kΩ⋅µm was achieved without any doping technique.