Room-temperature InGaAs nanowire array band-edge lasers on patterned silicon-on-insulator platforms
2019
Integration of ultracompact light sources on silicon platforms is regarded as
a crucial requirement for various nanophotonic applications. In this work,
InGaAs/InP core/shell nanowire array photonic crystal lasers are demon-
strated on silicon-on-insulator substrates by selective-area epitaxy. 9 9
square-lattice nanowires forming photonic crystal cavities with a footprint of
only 3.0 3.0 μm
2
, and a high Q factor of 23 000 are achieved by forming
these nanowires on two-dimensional silicon gratings. Room-temperature
lasing is observed from a fundamental band-edge mode at 1290 nm, which is
the O-band of the telecommunication wavelength. Optimized growth
templates and effective in-situ passivation of InGaAs nanowires enable the
nanowire array to lase at a low threshold of 200 μJcm
2
, without any
signature of heating or degradation above the threshold. These results
represent a meaningful step toward ultracompact and monolithic III–V lasers
on silicon photonic platforms
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
44
References
10
Citations
NaN
KQI