FORMATION OF A SCHOTTKY BARRIER BETWEEN EUTECTIC GA,IN AND THIOPHENE OLIGOMERS

The formation of a Schottky barrier between an eutectic (Ga,In) alloy and a highly doped thiophene oligomer is followed as a function of time using current density–voltage and capacitance–voltage measurements. Within 1 h, the diode characteristics change from almost nonrectifying, leaky behavior into a rectification ratio of 104 with a considerably reduced leakage current. Measurements and energy band diagram calculations show that the depletion width increases with time due to a decrease in the ionizable acceptor density of the semiconductor at the Schottky interface. This is probably caused by a chemical reaction between the in-diffusing metals and the doped oligomer.