A 50 - 90 GHz High Efficiency Fully integrated $0.13 \mu \mathrm{m}$ Si Ge Power Amplifier

The design and simulation of wideband 50 GHz- 90 GHz power amplifier(PA) using $0.13\quad \mu \mathrm{m}$ BiCMOS SiGe:C HBT technology is presented. Stagger tuning technique is utilized to achieve the wideband performance. Source and Loadpull contours are used for improving the output power and power added efficiency. The proposed wideband power amplifier achieves post-layout power gain $(S_{21})$ of 18.5 $\mathrm{dB}\pm 1.8\ \mathrm{dB}$ ; input and output return loss below −7 dB and −8 dB, respectively over the 50 GHz to 90 GHz frequency range. Furthermore, the PA delivers saturated output power of 15 dBm with 19% power added efficiency (PAE) at 77 GHz. Moreover, the proposed SiGe power amplifier consumes only 120 mW from 3.3V voltage supply.