Properties of IZTO Thin Films Deposited on PET Substrates with The SiO 2 Buffer Layer

ABSTRACT150-nm-thick In-Zn-Tin-Oxide (IZTO) films were deposited by RF magnetron sputtering after a 10 to 50-nm-thick SiO 2 bufferlayer was deposited by plasma enhanced chemical vapor deposition (PECVD) on polyethylene terephthalate (PET) substrates.The electrical, structural, and optical properties of the IZTO/SiO 2 /PET films were analyzed with respect to the thickness of theSiO 2 buffer layer. The mechanical properties were outstanding at a SiO 2 thickness of 50 nm, with a resistivity of 1.45 × 10 −3 Ω-cm,carrier concentration of 8.84 × 10 20 /cm 3 , hall mobility of 4.88 cm 2 /Vs, and average IZTO surface roughness of 12.64 nm. Also, thetransmittances were higher than 80%, and the structure of the IZTO films were amorphous, regardless of the SiO 2 thickness.These results indicate that these films are suitable for use as a transparent conductive oxide for transparency display devices.Key words : IZTO, Sputtering, Transparent conductive oxide, SiO 2 buffer layer, Thin film 1. INTRODUCTION