Contribution of low-energy (≪ 10 MeV) neutrons to upset rate in a 65 nm SRAM

Predictions of single and multiple cell upsets in a 65 nm bulk CMOS SRAM are presented for the low-energy (≪ 10 MeV) portion of the NYC neutron spectrum. Scattering is identified as a significant nuclear mechanism for this regime and the consequence for multiple bit upset is discussed. The contribution is compared to the full spectrum.