Highly Manufacturable 1Gb SDRAM

A fully working 1G SDRAM( 1073741824 bits) is fabricated by 0.18 pm CMOS technology. This is, to the best of our knowledge, the first fully working highest density DRAM ever achieved. By realizing fully working 1Gb SDRAM, the era of giga bit density is opened. The technologies employed in this 1Gb SDRAM are retrograded twin-well, STI, TiSi2 gate, Ta205+HSG capacitor, deep contact process, W-plug and W-wiring process followed by relaxed double metallization. In addition, the CMP process is also used for the global and local topography. In this study, the key items for realizing a fully working 1Gb SDRAM will be reported.