Magnetic field effect on radiative recombination of localized carriers at GaAs/AlGaAs heterointerface

The polarized photoluminescence from localized interface states in a GaAs/AlGaAs single heterojunction have been studied as a function of magnetic field in Faraday geometry. A theoretical model of carrier trapping into these interface states has been developed. The effect of magnetic field on the spectra is discussed in terms of the field-dependent carrier trapping into the tail of localized states.