Improved lifetimes of (GaAl)As visible (740 nm) lasers by reducing bonding stress

It is shown that the active layer stress caused by the bonding process can be reduced by setting the thicknesses of the cap layer and the substrate at the appropriate values. The life test of the (GaAl)As V‐channeled substrate inner stripe lasers emitting at 740 nm, 50 °C demonstrated that the lifetime is considerably improved by the introduction of the thick cap layer (∼40 μm) and the thinned substrate (∼80 μm).