Schottky barriers on MgxZn1−xTe alloys

Indium surface barriers on MgxZn1−xTe alloys have been investigated. For the composition x=0 (ZnTe), capacitance–voltage and photoelectric measurements yielded a barrier height φB of 1.84+0.02 eV. A gradual decrease of φB with increasing Mg content has been observed through photoelectric measurements. The results are interpreted on the basis of the simple Schottky theory. Electron affinity values in the range 3.68>χs>2.79 eV have been deduced for MgxZn1−xTe in the composition range 0

Keywords:

• Schottky barrier
• Photoelectric effect
• Electron affinity
• Schottky diode
• Indium
• Chemistry
• Inorganic chemistry
• electric contact
• Analytical chemistry

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