Reproducible Quantitative SIMS Analysis of Semiconductors in the Cameca IMS 3F

The use of ion-implanted standards for the quantification of SIMS depth profiles is well established [1]. The absolute accuracy obtainable depends on the accuracy with which the implanted dose is known (either from accurate dosimetry on the implanter or from independent calibration of the specimens), but the experimental errors involved in making SIMS measurements also need to be assessed.