Method for detecting phosphor concentration in phosphor-doped silica

The invention relates to a method for detecting phosphor concentration in phosphor-doped silica, which is characterized in that the deposition frequency in current deposition equipment is simply adjusted, the stack of a plurality of PSG films are formed on one silicon chip by a conventional technological parameter, so that a stack structure of the film can be taken as an integral body, the influence of a oxidized SiO2 layer to measurement of phosphor concentration is effectively reduced, and thereby, the measurement precision of X-ray fluorescence analysis (XRF) can be effectively increased. The relative equipment of the X-ray fluorescence analysis (XRF) method is used for detecting the phosphor concentration in the PSG film of an initial layer, a lot of detection cost is saved, and the detection time is shortened. The invention also relates to a deposition step of the PSG film and a cooling step which are alternatively carried out, so that phosphor concentration can keep consistent on a vertical direction, and the detection accuracy can be increased for further.