Electron beam fabricated 0.5 µm gate GaAs Schottky-barrier field effect transistor

Summary form only given. A computer-controlled electron beam microfabrication system was used to fabricate a GaAs Schottky barrier field effect transistor with a 0.5 μm gate length. This result represents the first time a 0.5 μm gate microwave device has been fabricated by electron beam techniques. The fabrication process described in the paper is a viable method to make devices with submicron gates.