Multipurpose implanter for high technology development

To provide basic operations of semiconductor and radiation materials technologies, a multipurpose implanter with intense ion beams was developed at the Institute of Nuclear Physics. The generated beamparameters are as follows: ions are H+, O+; C+; the ion energy is up to 200 keV; the beam current is up to 2 mA; and the implantation mode is continuous. The size of the target to be processed can reach 76 × 76 mm2. During the implanter operation, the target chamber vacuum reaches 10−4 Pa. The entire process of target irradiation is fully automated.