Advanced photomask repair technology for 65nm lithography (4)

Repair technology for 65nm generation photomasks requires more accurate shape and transmittance. The objective of this study is to evaluate FIB repair process with low acceleration voltage. The evaluation items were imaging impact, defect visibility, repaired shape, through focus behavior, repeatability of edge placement and controllability of repair size. In conclusion, we confirmed that FIB repair process with low acceleration voltage is applicable to 65nm generation photomasks.