Graphene/zinc selenide nanobelt schottky junction blue-ray photoelectric switch modified by indium nanoparticle array and preparation method thereof

The invention discloses a graphene/zinc selenide nanobelt schottky junction blue-ray photoelectric switch modified by an indium nanoparticle array and a preparation method thereof. According to the switch, a zinc selenide nanobelt is distributed on the upper surface of an insulation substrate, one end of the zinc selenide nanobelt is provided with a gold electrode in ohmic contact with the zinc selenide nanobelt, the other end of the zinc selenide nanobelt is provided with a graphene film in schottky contact with the zinc selenide nanobelt, and the indium nanoparticle array arranged in the shape of a hexagonal lattice modifies the upper surface of the graphene film. By utilizing a surface plasma resonance characteristic of the regularly arranged indium nanoparticle array, the blue-ray photoelectric switch enhances adsorption for light and improves the response degree for the light; and the preparation method is simple and is suitable for large-scale production, a blue-ray photoelectric switch having the fast response speed and the high anti-electromagnetic interference capability can be prepared, and a new prospect is developed for an application of a zinc selenide nano material in a photoelectric switch.