Novel compositional accommodation mechanism in SrNbO3 epitaxial thin films revealed by analytical electron microscopy

A novel compositional accommodation mechanism in perovskite (ABO3) SrNbO3 thin films was revealed by field-emission analytical electron microscopy (AEM). A new analytical methodology for estimating localized structures such as planar faults is also presented. The method was applied for investigating the compositional accommodation mechanism of B-ion-rich SrNbO3 epitaxial thin films. Two types of accommodation mechanism—formation of B-ion-rich amorphous phase and (110)-located high-density planar defects—were revealed. The latter mechanism is a new finding for B-ion-rich perovskites. Copyright © 2003 John Wiley & Sons, Ltd.