Controlled manipulation of domain walls in ultra-thin CoFeB nanodevices

Abstract We report on studies of magnetic domain wall (DW) movement within nanodevices containing magnetic components formed from perpendicularly magnetised CoFeB (0.6 nm) thin films. Methods for low energy and smooth DW propagation as well as controlled and reproducible pinning of DWs at geometrically defined sites along nanowires are presented. Conventional anomalous Hall effect measurements as well as an indirect method using overlying electrodes are presented and compared. The results obtained from the individual studies of DW injection, propagation, pinning and measurement are assimilated into a prototype device suitable for the controlled pinning and annihilation of a single domain wall within the structure.