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Monte Carlo simulation of electron transport in strained Si/Si1-xGex n-MOSFETs
Monte Carlo simulation of electron transport in strained Si/Si1-xGex n-MOSFETs
1995
Mahbub Rashed
Wei Kuan Shih
S. Jallepalli
Thomas J. T. Kwan
C.M. Maziar
Keywords:
Surface roughness
Computational chemistry
Monte Carlo method
Dynamic Monte Carlo method
Materials science
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