Reliability issues of double gate dielectric stacks based on hafnium dioxide (HfO2) layers for non-volatile semiconductor memory (NVSM) applications

Abstract In this study, we present selected reliability issues of double gate dielectric stacks for non-volatile semiconductor memory (NVSM) applications. Fabricated gate structures were consisted of PECVD silicon oxynitride layer (SiO x N y ) as the pedestal layer and hafnium dioxide layer (HfO 2 ) as the top gate dielectric. In the course of this work, obtained MIS structures were investigated by means of current–voltage characteristics, as well as applying dc stresses in constant current (CCS) and voltage (CVS) mode. Presented results have shown that the application of ultra-thin PECVD silicon oxynitride layer results in significant increase of breakdown voltage value in comparison to MIS structure with only hafnia as the gate dielectric. Moreover, due to the high temperature annealing of deposited SiO x N y layers, MIS device demonstrates much lower leakage currents, as well as higher breakdown voltage values in comparison to device with ‘as-deposited’ SiO x N y bottom layer. The results also proved larger immunity to dc stresses and better retention characteristics of MIS devices with ‘annealed’ oxynitride, in comparison to ‘as-deposited’ pedestal layer.