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Structural Defects of Cubic InGaN/GaN Heterostructure Grown on GaAs(001) Substrate by MOVPE
Structural Defects of Cubic InGaN/GaN Heterostructure Grown on GaAs(001) Substrate by MOVPE
1999
Yoshitaka Taniyasu
Y. Watanabe
D. H. Lim
A. W. Jia
M. Shimotomai
Y. Kato
Masakazu Kobayashi
Akihiko Yoshikawa
Kiyoshi Takahashi
Keywords:
Metalorganic vapour phase epitaxy
Substrate (chemistry)
Heterojunction
Physics
Optoelectronics
Correction
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