New pull-in voltage modelling of step structure RF MEMS switch

Abstract In this paper, pull in voltage in closed form model is derived from the capacitance generated in RF MEMS switches during ON and OFF conditions. The proposed model contains the ligament efficiency term and can be applicable for all perforated RF MEMS switches. The proposed model is validated by computing error percentage between simulated and modelled values. The proposed switch with the non-uniform meander with dimensions tb=0.5 μm, td=0.1 μm, airgap=2 μm, Wb=120 μm, silicon nitride as a dielectric and gold as a beam material shows a very low error percentage of 3.9% and chosen as the best dimensions for proposed model of step structure RF MEMS switch.