Structural study of p-type μc-Si layer for solar cell application

Abstract It is important for solar cell application to study the opto-electrical properties of very thin ( T s ). The μc-Si layer directly grows on the underlying amorphous layer at T s =85°C. At T s =150°C, on the other hand, the layer has amorphous phase in the initial half zone and becomes crystalline phase in the latter half. At T s