Effect of growth temperature on the photovoltaic characteristics of thermal chemical vapor deposited MoS2 layers grown on p-type Si

In this work, MoS2 layers were grown on the silicon substrates using thermal chemical vapor deposition at different growth temperatures. This method was done by simultaneous evaporating of MoO3 and sulfur powders as precursors at one-step process. The structural properties of the samples were assessed by X-ray diffraction patterns which confirmed the formation of hexagonal MoS2 structures (2H-MoS2). The surface morphology and the thickness of the grown layer were determined by field emission scanning electron microscopy. Moreover, UV–Vis and Raman spectroscopy were applied to confirm the formation of the few layer MoS2 structures. Furthermore, the sheet resistance measurements were carried out to evaluate the resistivity of the obtained layers. In addition, the photovoltaic characteristics of the MoS2 layers grown on p-type Si as p–n junction with Ag (top) and Al (back) contacts were assessed under illumination of sun light simulator.