An InGaN/SiN x /Si Uniband Diode

We introduce a diode that operates differently from p–n junction or Schottky diodes. It is based on a p-Si/n-In0.4Ga0.6N heterojunction with a SiNx interlayer. With around 40% In content, the valence and conduction bands of Si and InGaN are aligned. The behavior of the p-Si/n-InGaN interface is ohmic due to electron–hole recombination and generation at forward and reverse bias. Upon insertion of a sufficiently thick SiNx interlayer, the forward current is governed by tunneling. The reverse current is blocked because electron–hole generation is no longer possible together at the interface. A pronounced, weakly temperature-dependent rectifying behavior results.