Profile Control of Donor Ions by Sn Co-implantation in Germanium

We studied N+/P junction formation in germanium by various ion species systematically. We evaluated the effect of co-implantation of C, Al and Sn in detail. It should be emphasized that the trade-off relationship between Rs and Xj can be overcome by Sn co-implantation, although a slight increase in Rs value was observed. Diffusion of phosphorus can be controlled by Sn co-implantation technique. We also evaluated the residual defects and stress generation of Sn co-implantation.