Quantum dot lasers grown by gas source molecular-beam epitaxy

Abstract We report on the InAs quantum dot lasers grown by gas source molecular-beam epitaxy, respectively, on GaAs and InP substrates. Room temperature continuous-wave operation was achieved for both InAs/GaAs and InAs/InP quantum dot lasers, respectively, at 1.10 μ m and 1.54 – 1.70 μ m wavelength region. More than 50 mW optical power was collected from one facet of the InAs/GaAs quantum dot lasers at 20 °C, while for InAs/InP quantum dot lasers the maximum output power was measured as 30 mW. For InAs/InP material system, by increasing the layer thickness of deposited InAs from 3.0 to 3.5 monolayers, the lasing wavelength can be extended from 1.5 – 1.6 μ m to 1.6 – 1.7 μ m . Moreover, a tunable quantum dot external cavity laser was demonstrated, utilizing the broad gain profile of InAs quantum dots.