New Y-function based MOSFET parameter extraction method from weak to strong inversion range

Abstract A new Y -function based MOSFET parameter extraction method is proposed. This method relies on explicit expressions of inversion charge and drain current versus Y c (= Q i √ C gc )-function and Y (= I d /√ g m )-function, respectively, applicable from weak to strong inversion range. It enables a robust MOSFET parameter extraction even for low gate voltage overdrive, whereas conventional extraction techniques relying on strong inversion approximation fail.